APPROXIMATE ANALYSIS OF GAIN SUPPRESSION IN INJECTION-LASERS FOR BAND-TO-BAND AND BAND-TO-IMPURITY-LEVEL TRANSITIONS

被引:17
作者
YAMADA, M [1 ]
HAYANO, K [1 ]
ISHIGURO, H [1 ]
SUEMATSU, Y [1 ]
机构
[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
关键词
D O I
10.1143/JJAP.18.1531
中图分类号
O59 [应用物理学];
学科分类号
摘要
An approximate analysis of the gain suppression is given for both band-to-band and band-to-impurity-level transitions with the help of the density matrix method. The gain-suppression is represented in an explicit form as a function of the injection current. This approximate method is convenient for investigating the characteristics of injection lasers. © 1979 IOP Publishing Ltd.
引用
收藏
页码:1531 / 1541
页数:11
相关论文
共 16 条
[1]  
AIKI K, 1978, IEEE J QUANTUM ELECT, V14, P2
[2]  
BUTCHER PN, 1967, NONLINEAR OPTICAL PH
[3]   HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].
CONWELL, EM ;
VASSELL, MO .
PHYSICAL REVIEW, 1968, 166 (03) :797-+
[4]   THEORY OF OPTICAL MASER [J].
LAMB, WE .
PHYSICAL REVIEW, 1964, 134 (6A) :1429-+
[5]  
LANG R, 1977, JPN J APPL PHYS, V16, P205, DOI 10.1143/JJAP.16.205
[6]   LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS [J].
NAKAMURA, M ;
AIKI, K ;
CHINONE, N ;
ITO, R ;
UMEDA, J .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4644-4648
[7]  
NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670
[8]  
NAMIZAKI H, 1976, T I ELECTRON COMMUN, V59, P5
[9]   ELECTRON-SCATTERING TIMES IN GAAS INJECTION LASERS [J].
NISHIMURA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :109-117
[10]  
NISHIMURA Y, 1973, IEEE J QUANTUM ELECT, V9, P10