EFFECT OF ION-IMPLANTATION DAMAGE ON OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE

被引：18

作者：

SHIFRIN, GA

HUNSPERGER, RG

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 07期

关键词：

D O I：

10.1063/1.1653399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：274 / +

页数：1

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[1] CHANGES OF OPTICAL REFLECTIVITY (1.8-EVTO2.2-EV) INDUCED BY 40-KEV ANTIMONY ION BOMBARDMENT OF SILICON
HART, RR
MARSH, OJ
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[2] HUNSPERGER RG, 1969, J ELECTROCHEM SOC, V116, P489
[3] ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN 1-EV TO 6-EV REGION
KURTIN, S
SHIFRIN, GA
MCGILL, TC
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (07) : 223 - &
[4] OPTICAL REFLECTION STUDIES OF DAMAGE IN ION IMPLANTED SILICON
MCGILL, TC
KURTIN, SL
SHIFRIN, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 246 - +
[5] WESTMORELAND JE, TO BE PUBLISHED