VACANCY-MODEL INTERPRETATION OF EPR-SPECTRUM OF SI-PT-

被引:39
作者
ANDERSON, FG [1 ]
HAM, FS [1 ]
WATKINS, GD [1 ]
机构
[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 07期
关键词
D O I
10.1103/PhysRevB.45.3287
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The vacancy model for platinum in silicon as proposed by Watkins postulates a neutral Pt atom in the 5d10 electronic configuration occupying a negatively charged lattice vacancy, so that electron properties of Pt- should be similar to those of the isolated vacancy V-. We show that this model, including strong Pt spin-orbit coupling and a Jahn-Teller (JT) distortion of C2-upsilon symmetry combining tetragonal and trigonal components, and having only approximately 10% of the electronic wave function localized on the Pt, is qualitatively consistent with the results of the electron-paramagnetic-resonance (EPR) studies of Woodbury and Ludwig, which revealed an unusual form for the g tensor (nearly axial about <100> but departing strongly from the spin-only value of 2, with g perpendicular-to < 2 < g parallel-to). The model accounts also for the anisotropic Pt hyperfine interaction and for superhyperfine interaction found to involve only two of the four nearest-neighbor Si atoms. With three electrons in t2 vacancylike orbitals the JT distortion has two energetically similar forms yielding the same C2-upsilon symmetry, one of which occurs for V- and the other for Pt-. With this identification, opposite signs found for the experimental strain-coupling coefficients of V- and Pt- may be explained. The vacancy model predicts a positive value for the product g(xx)g(yy)g(zz), the opposite of that given by an alternative model due to Ammerlaan and van Oosten, which predicts approximately 70% localization in the Pt 5d shell. These models can, therefore, be distinguished by an experiment that determines this sign.
引用
收藏
页码:3287 / 3303
页数:17
相关论文
共 40 条
[1]   THEORY OF THE NUCLEAR HYPERFINE STRUCTURE OF PARAMAGNETIC RESONANCE SPECTRA IN CRYSTALS [J].
ABRAGAM, A ;
PRYCE, MHL .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 205 (1080) :135-153
[2]  
ABRAGAM A, 1970, ELECTRON PARAMAGNETI, P139
[3]  
ABRAGAM A, 1970, ELECTRON PARAMAGNETI, P690
[4]  
Abragam A., 1970, ELECT PARAMAGNETIC R, P702
[5]   WATSON-SPHERE-TERMINATED MODEL APPLIED TO THE AUO AND PT- SUBSTITUTIONAL IMPURITIES IN SILICON [J].
ALVES, JLA ;
LEITE, JR .
PHYSICAL REVIEW B, 1984, 30 (12) :7284-7286
[6]   ELECTRONIC-STRUCTURE OF PLATINUM IN SILICON [J].
AMMERLAAN, CAJ ;
VANOOSTEN, AB .
PHYSICA SCRIPTA, 1989, T25 :342-347
[7]   VACANCY-MODEL-BASED ELECTRONIC-STRUCTURE OF THE PT- IMPURITY IN SILICON [J].
ANDERSON, FG ;
DELERUE, C ;
LANNOO, M ;
ALLAN, G .
PHYSICAL REVIEW B, 1991, 44 (19) :10925-10928
[8]   EPR INVESTIGATION OF PT- IN SILICON [J].
ANDERSON, FG ;
MILLIGAN, RF ;
WATKINS, GD .
PHYSICAL REVIEW B, 1992, 45 (07) :3279-3286
[9]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[10]   SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959