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RECTIFICATION PROPERTIES OF METAL SEMICONDUCTOR CONTACTS

被引：23
作者：
BORNEMAN, EH
SCHWARZ, RF
STICKLER, JJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1955年 / 26卷 / 08期
关键词：
D O I：
10.1063/1.1722127
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1021 / 1028
页数：8
相关论文
共 4 条
[1]   THE SURFACE-BARRIER TRANSISTOR .1. PRINCIPLES OF THE SURFACE-BARRIER TRANSISTOR [J].
BRADLEY, WE .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1702-1706
[2]   THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS [J].
SCHWARZ, RF ;
WALSH, JF .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1715-1720
[3]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
[4]   THE SURFACE-BARRIER TRANSISTOR .2. ELECTROCHEMICAL TECHNIQUES FOR FABRICATION OF SURFACE-BARRIER TRANSISTORS [J].
TILEY, JW ;
WILLIAMS, RA .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1706-1708
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