STUDY OF SINTERING BEHAVIOR AND ELECTRICAL-PROPERTIES OF CU-ZN-FE-O SYSTEM

Copper zinc ferrites (Cu1-xZnxFe2O4) with x = 0.1, 0.2, 0.3 were prepared by solid state reaction technique. The samples were presintered at 900 degrees C for 40 to 45 hrs and finally at 950 degrees C for 4 hrs followed by air quenching. The lattice parameter, X-ray densities (D-m), grain size, bulk densities (D) and porosity (P) were measured for each sample after successive heat treatments and the effect on the above mentioned properties was studied. Electrical resistivity of the samples after final heat treatment was measured in the temperature range of 50 to 230 degrees C. The Arrhenius plots of these samples exhibit linear behavior from which the activation energy of the system has been derived. The room temperature resistivity after quenching from 950 degrees C shows change of species of charge carriers that is from n-type at lower Zn concentration to p-type at higher Zn concentration.