PICOSECOND PULSE GENERATION FROM INGAASP LASERS AT 1.25 AND 1.3 MU-M BY ELECTRICAL PULSE PUMPING

被引：52

作者：

LIU, PL ^{[1
]}

LIN, C ^{[1
]}

KAMINOW, IP ^{[1
]}

HSIEH, JJ ^{[1
]}

机构：

[1] LASERTRON INC,BEDFORD,MA 01730

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/JQE.1981.1071181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：671 / 674

页数：4

共 19 条

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[7] BANDWIDTH-LIMITED PICOSECOND PULSE GENERATION IN AN ACTIVELY MODE-LOCKED GAALAS DIODE-LASER [J].

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[8] ZN-DIFFUSED, STRIPE-GEOMETRY, DOUBLE-HETEROSTRUCTURE GALNASP-INP DIODE-LASERS [J].

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[9]

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[10]

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