ELECTRICAL-CONDUCTION IN SINGLE-CRYSTAL THALLIC OXIDE .2. EFFECTS OF ANNEALING AT 923DEGREESK IN OXYGEN PRESSURES FROM 0.01 TO 1 ATMOSPHERE

被引：14

作者：

SHUKLA, VN

WIRTZ, GP

机构：

[1] UNIV ILLINOIS,DEPT CERAM ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1977年 / 60卷 / 5-6期

关键词：

D O I：

10.1111/j.1151-2916.1977.tb14120.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：259 / 261

页数：3

共 16 条

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[9] A SIMPLE TECHNIQUE FOR SEALING MOLYBDENUM TO ALUMINA OR PLATINUM TO ALUMINA BY MEANS OF A GLASS-CERAMIC SEAL [J].

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[10] D1-THALLIUM MONOXIDE AND TETRA-THALLIUM TRIOXIDE MONOCRYSTALS AND THEIR SEMICONDUCTOR PROPERTIES [J].

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