THERMALLY ASSISTED FIELD-EMISSION NEAR PRECIPITATES IN P-N-JUNCTIONS

被引:4
作者
BUSTA, HH [1 ]
WAGGENER, HA [1 ]
机构
[1] TELETYPE CORP,SKOKIE,IL 60076
关键词
D O I
10.1063/1.323392
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4385 / 4388
页数:4
相关论文
共 7 条
[1]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[2]   PRECIPITATION-INDUCED CURRENTS AND GENERATION-RECOMBINATION CURRENTS IN INTENTIONALLY CONTAMINATED SILICON P+N JUNCTIONS [J].
BUSTA, HH ;
WAGGENER, HA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1424-1429
[3]   PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON [J].
DENDA, S ;
NICOLET, MA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2412-&
[4]   TEMPERATURE-AND-FIELD EMISSION OF ELECTRONS FROM METALS [J].
DOLAN, WW ;
DYKE, WP .
PHYSICAL REVIEW, 1954, 95 (02) :327-332
[5]  
Good RH., 1956, FIELD EMISSION, P176
[6]  
MOLL JL, 1964, PHYSICS SEMICONDUCTO
[7]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH2