RELAXATION SPECTRUM ANALYSIS OF SEMICONDUCTOR-ELECTROLYTE INTERFACE-TIO2

被引:114
作者
TOMKIEWICZ, M [1 ]
机构
[1] UNION CARBIDE CORP, TARRYTOWN TECH CTR, TARRYTOWN, NY 10591 USA
关键词
electrolyte; impedance; interface; semiconductor;
D O I
10.1149/1.2128931
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A new technique to evaluate the equivalent circuit elements of a semiconductor-electrolyte interface is presented. The technique is based on impedance measurements over a wide frequency range. We present results on n-type TiO2-aqueous electrolyte interfaces, which we can represent in terms of an equivalent circuit of passive elements. The equivalent circuit was interpreted in terms of two space charge layers with two different doping levels. The effect of surface treatment on the relative areas and on the lateral distribution of the two regions is also presented. © 1979, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:2220 / 2225
页数:6
相关论文
共 24 条
[1]   STRUCTURE OF SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
BODDY, PJ .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1965, 10 (03) :199-&
[2]   INTERPRETATION OF MOTT-SCHOTTKY PLOTS DETERMINED AT SEMICONDUCTOR-ELECTROLYTE SYSTEMS [J].
DEGRYSE, R ;
GOMES, WP ;
CARDON, F ;
VENNIK, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :711-712
[3]   THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J].
DEWALD, JF .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :615-639
[4]   ELECTROCHEMICAL PROPERTIES OF SEMICONDUCTING TIO2 (RUTILE) SINGLE-CRYSTAL ELECTRODE [J].
DUTOIT, EC ;
CARDON, F ;
GOMES, WP .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1976, 80 (06) :475-481
[5]   INVESTIGATION ON FREQUENCY-DEPENDENCE OF IMPEDANCE OF NEARLY IDEALLY POLARIZABLE SEMICONDUCTOR ELECTRODES CDSE, CDS AND TIO2 [J].
DUTOIT, EC ;
VANMEIRHAEGHE, RL ;
CARDON, F ;
GOMES, WP .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1975, 79 (12) :1206-1213
[6]  
GERISCHER H, 1970, PHYSICAL CHEM ADV A, V9, pCH5
[7]   SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
SAH, CT ;
SNOW, EH ;
DEAL, BE .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2458-&
[8]   FREQUENCY RESPONSE OF SURFACE INVERSION LAYER IN SILICON [J].
HOFSTEIN, SR ;
ZAININGER, KH ;
WARFIELD, G .
PROCEEDINGS OF THE IEEE, 1964, 52 (08) :971-&
[9]   FLATBAND POTENTIAL OF A PARA-TYPE PHOSPHIDE ELECTRODE [J].
HOROWITZ, G .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3571-3573
[10]   FREQUENCY-DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODES [J].
LAFLERE, WH ;
VANMEIRHAEGHE, RL ;
CARDON, F ;
GOMES, WP .
SURFACE SCIENCE, 1976, 59 (02) :401-412