FABRICATION OF OPTOELECTRONIC DEVICES ON ALGAAS USING ELECTRON-BEAM LITHOGRAPHY

被引：3

作者：

STAUFFER, JM

OPPLIGER, Y

VASEY, F

机构：

[1] Centre Suisse d'Electronique et de Microtechnique S.A., (CSEM)

[2] Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90075-O

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The realization of integrated optoelectronic devices requires the development of fabrication techniques capable of patterning features with dimensions smaller than the wavelength to be used. The goal of this project is not only the fabrication of various submicron gratings, which are the key elements in this application, but also their integration into planar optical systems. With the development of a dedicated technology and the use of the scaling feature of the pattern generator to obtain any desired grating period, we want to demonstrate that the high resolution capability and the flexibility of electron beam lithography make it an adequate technique for new applications in the field of optics.

引用

页码：193 / 196

页数：4