ELECTRON-TUNNELING INTO BISRCACUO

被引：8

作者：

CUCOLO, AM

DILEO, R

ROMANO, P

BALESTINO, G

机构：

[1] Dipatimento di Fisica, Università di Salerno, 84081 Baronissi, SA

来源：

PHYSICA C | 1991年 / 180卷 / 1-4期

关键词：

D O I：

10.1016/0921-4534(91)90668-O

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have realized planar tunnel junctions on chemically etched BiSrCaCuO films and single crystals with natural barriers and Pb or Au films as counterelectrodes. The best data show a BiSrCaCuO gap-like structure at about +/- 22mV, a second feature at about +/- 40mV and high bias resistances decreasing with voltage. The majority of the junctions show smeared structures at intermediate voltages and flat resistances at high voltages. We speculate that differences could be due to the presence of different BiSrCaCuO phases with different T(c) in the junction area.

引用

页码：208 / 211

页数：4

共 17 条

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