LOW-TEMPERATURE GROWTH OF HIGH-T-C SUPERCONDUCTING FILMS BY PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：1

作者：

KANEHORI, K

SUGII, N

SAITO, S

机构：

[1] Central Research Laboratory, Hitachi, Ltd, Kokubunji

来源：

PHASE TRANSITIONS | 1993年 / 42卷 / 1-2期

关键词：

OXIDE SUPERCONDUCTOR; YBA2CU3OX; MOCVD; PLASMA; THIN FILM;

D O I：

10.1080/01411599308203502

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Plasma-enhanced MOCVD in which metal-organic compounds are sublimated directly into the growth chamber is studied for the first time as a new low-temperature process for growing superconducting YBa2Cu3O7-x thin films. Y(THD)(3), Ba(THD)(2), Cu(THD)(2) and oxygen are used as metal sources and oxydizing agent. Emission spectroscopy reveals that activated metal-organic compounds and activated oxygen species are present during film growth. Superconducting YBa2Cu3O7-x films whose zero-resistivity temperature are 50 K and 82 K are grown at 550 degrees C and 600 degrees C.

引用

页码：111 / 115

页数：5

共 6 条

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