Thermal activation of glide in Inp single crystals

被引:31
作者
Gall, P.
Peyrade, J. P.
Coquille, R.
Reynaud, F.
Gabillet, S.
Albacete, A.
机构
[1] Inst Natl Sci Appl, Phys Solides Lab, F-31077 Toulouse, France
[2] Ctr Natl Etud Telecommun, F-22301 Lannion, France
[3] CNRS, Opt Elect Labs, F-31055 Toulouse, France
来源
ACTA METALLURGICA | 1987年 / 35卷 / 01期
关键词
D O I
10.1016/0001-6160(87)90222-7
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
The study of the plasticity of undoped indium phosphide between 573 and 1023 K by means of uniaxal compression (epsilon similar or equal to: 10(-4) s(-1)), stress relaxation and transmission electron microscopy shows that the deformation is controlled by the motion of screw dislocations in the stress field of the lattice according to a thermally activated Peierls mechanism. Between 573 and 673 K, this mechanism is pure; it is assisted by the internal stress between 673 and 1023 K and the lattice friction has no effect on the screw dislocations above 1023 K: the deformation is then controlled by the forest mechanism. To move freely in the crystal, a screw dislocation needs an energy below 2.8 eV.
引用
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页码:143 / 148
页数:6
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