MECHANOCHEMICAL SUPERPOLISHING OF DIAMOND USING NANO3 OR KNO3 AS OXIDIZING-AGENTS

被引：50

作者：

KUHNLE, J ^{[1
]}

WEIS, O ^{[1
]}

机构：

[1] UNIV ULM,FESTKORPERPHYS ABT,D-89069 ULM,GERMANY

来源：

SURFACE SCIENCE | 1995年 / 340卷 / 1-2期

关键词：

DIAMOND; INSULATING SURFACES; LOW INDEX SINGLE CRYSTAL SURFACES; OXIDATION; SURFACE CHEMICAL REACTION; SURFACE STRUCTURE;

D O I：

10.1016/0039-6028(95)00691-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the present development of diamond electronics, one needs atomically flat and damage free diamond substrates for the growth of doped and undoped homoepitaxial layers of high crystalline quality. We show that atomically flat surfaces with no damage layer below can be produced by mechanochemical superpolishing of diamond substrates using NaNO3 or KNO3 as oxidizing agents. A residual roughness of 0.2 nm rms and less is achieved independent of crystal orientation.

引用

页码：16 / 22

页数：7

共 21 条

[1] CHARACTERIZATION OF UNDOPED AND DOPED HOMOEPITAXIAL DIAMOND LAYERS PRODUCED BY MICROWAVE PLASMA CVD [J].