FORMATION OF SI-ENRICHED METASTABLE COMPOUNDS IN THE PT-SI SYSTEM USING ION-BOMBARDMENT AND POST ANNEALING

被引：31

作者：

TSAUR, BY

LIAU, ZL

MAYER, JW

机构：

[1] California Institute of Technology, Pasadena

来源：

PHYSICS LETTERS A | 1979年 / 71卷 / 2-3期

关键词：

D O I：

10.1016/0375-9601(79)90184-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Silicon-enriched Pt-Si mixed layers have been formed by implanting through a thin PtSi film on a Si substrate. Subsequent thermal annealing at 400-500°C resulted in the formation of well-defined phases. The compounds have compositions close to Pt2Si3 and Pt4Si9 and possess properties of metastable phases. © 1979.

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页码：270 / 272

页数：3

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