INVESTIGATION OF POROUS SILICON FORMATION DURING ANODIC TREATMENT IN AQUEOUS HF

被引：18

作者：

LABUNOV, V

BARANOV, I

BONDARENKO, V

机构：

[1] Minsk Radioengineering Institute, Minsk

来源：

THIN SOLID FILMS | 1979年 / 64卷 / 03期

关键词：

D O I：

10.1016/0040-6090(79)90335-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of porous silicon (PS) during the anodic treatment of monocrystalline silicon in 24% aqueous HF has been investigated. Three specific regions were identified in the electrode potential curves. Furthermore, it was observed that the density of the PS formed decreases with depth. The thickness of the PS increases according to a linear law. Taking into account these data and using the known chemical reactions at the silicon-electrode interface, a model of the formation of PS was developed. © 1979.

引用

页码：479 / 483

页数：5

共 10 条

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