SCANNING-TUNNELING-MICROSCOPY INVESTIGATION OF THE NUCLEATION AND GROWTH OF AG/SI(111)-(ROOT-3X-ROOT-3)

被引：26

作者：

MCCOMB, DW ^{[1
]}

MOFFATT, DJ ^{[1
]}

HACKETT, PA ^{[1
]}

WILLIAMS, BR ^{[1
]}

MASON, BF ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.49.17139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The scanning tunneling microscope has been used to identify and distinguish between various stages of reactive growth of Ag on Si(111)-(7 X 7) at 450-degrees-C. Continuous investigation of the reaction trend was made possible by producing a concentration gradient of Ag on the substrate. The surface features observed, such as hole-island pairs, are dependent on the sample coverage. Mechanisms for the formation of Ag/Si(111)-(square-root 3 X square-root 3) are proposed, and experimental confirmation of their validity is presented. Antiphase boundaries between neighboring (square-root 3 X square-root 3) domains have been observed, and a model for the atomic structure across such a boundary is shown. At near monolayer coverages small regions that exhibit the Si(111)-(1 X 1) structure have been identified.

引用

页码：17139 / 17148

页数：10

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