SI-C-H BONDING IN AMORPHOUS SI1-XCX-H FILM/SUBSTRATE INTERFACES DETERMINED BY REAL-TIME INFRARED-ABSORPTION DURING REACTIVE MAGNETRON SPUTTER-DEPOSITION

被引：24

作者：

KATIYAR, M ^{[1
]}

YANG, YH ^{[1
]}

ABELSON, JR ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 03期

关键词：

D O I：

10.1063/1.360260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We determine the evolution of Si-H and C-H bonding during the growth of hydrogenated amorphous silicon carbide films by reactive magnetron sputtering of a Si target in (Ar+H-2+CH4). Si-H and C-H modes are observed by infrared reflectance spectroscopy. An optical cavity substrate is used to enhance the sensitivity. We identify Si-H stretching modes at 2110 and 2145 cm(-1) due to Si-H clusters in microvoids and Si-H back-bonded to carbon, respectively. C-H stretching modes are identified at 2870, 2900, and 2950 cm(-1). These indicate dominant sp(3) bonding configuration for C. During initial growth, a transition layer rich in H and C is observed. Steady state growth is not achieved until >250 Angstrom on SiO2 substrates, and similar to 70 Angstrom on alpha-Si:H substrates. (C) 1995 American Institute of Physics.

引用

页码：1659 / 1663

页数：5