THERMAL-STABILITY OF ON-CHIP COPPER INTERCONNECT STRUCTURES

被引：32

作者：

GUTMANN, RJ ^{[1
]}

CHOW, TP ^{[1
]}

KALOYEROS, AE ^{[1
]}

LANFORD, WA ^{[1
]}

MURAKA, SP ^{[1
]}

机构：

[1] SUNY ALBANY, ALBANY, NY 12222 USA

来源：

THIN SOLID FILMS | 1995年 / 262卷 / 1-2期

关键词：

COPPER; METALLIATION;

D O I：

10.1016/0040-6090(95)05841-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper metallization for on-chip multilevel interconnects is receiving increasing attention for future generations of integrated circuits (ICs), with advantages of low line resistance, low interconnect delay, high electromigration resistance and, possibly, overall back-end process simplicity. However, copper introduces a set of processing and manufacturing issues which must be addressed in the research and development phases of the technology, including thermal stability of interconnect structure. This paper summarizes the most likely processing steps for integrating copper metallization into IC technology and presents the current status of thermal-stability investigations that impact manufacturing issues (materials, unit processing and process-integration issues).

引用

页码：177 / 186

页数：10

共 19 条

[1] Gutmann, Chow, Kaloyeros, Lanford, Murarka, MRS Proceedings, 337, (1994)
[2] Ohmi, Saito, Otsuki, Shibata, Nitta, J. Electrochem. Soc., 138, (1991)
[3] Luther, Et al., Proc. 1993 VMIC Conference, VM1C Cat. No. 93 ISMIC-102, (1993)
[4] Paraszczak, Edelstein, Cohen, Babich, Hummel, Proc. 1993 IEDM, IEEE Cat. No. 93 CH 3361-3, (1993)
[5] Cho, Kang, Ryu, Wong, Proc. 1993 IEDM, IEEE Cat. No. 93 CH 3361-3, (1993)
[6] Murarka, Gutmann, Kaloyeros, Lanford, Thin Solid Films, 236, (1993)
[7] Witty, Murarka, Fraser, Proc. SRC Topical Research Conf. on Copper Interconnect Technoloy, SRC Publication No. P93003, (1993)
[8] MRS Bulletin, (1993)
[9] Kaloyeros, Fury, MRS Bulletin, 18, (1993)
[10] Yamada, Hoshi, Takewaki, Shibata, Ohmi, Nitta, Proc. 1993 IEDM, IEEE Cat. No. 93 CH 3361-3, (1993)

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