A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR

被引：280

作者：

EVERSTEYN, FC

SEVERIN, PJW

BREKEL, CHJV

PEEK, HL

机构：

来源：

关键词：

D O I：

10.1149/1.2407685

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：925 / +

页数：1

共 9 条

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[4] KOGA Y, PRIVATE COMMUNICATIO
[5] PETTERSSEN S, 1965, WEATHER ANALYSIS FOR
[6] RUNDLE PC, 1968, INT J ELECTRON, V24, P405, DOI 10.1080/00207216808938037
[7] SEVERIN PJ, TO BE PUBLISHED
[8] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON
SHEPHERD, WH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 988 - &
[9] AM I PHYSICS HANDBOO, P2