NEW GETTERING USING MISFIT DISLOCATIONS IN HOMOEPITAXIAL WAFERS WITH HEAVILY BORON-DOPED SILICON SUBSTRATES

被引：13

作者：

KIKUCHI, H

KITAKATA, M

TOYOKAWA, F

MIKAMI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.100953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：463 / 465

页数：3

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