HALL EFFECT AND CONDUCTIVITY OF INSB SINGLE CRYSTALS

[1] BRECKENRIDGE, 1953, B AM PHYS SOC, V28, P45

[2] BRIGGS HB, UNPUB

[3] PEARSON GL, 1953, PHYS REV, V90, P153, DOI 10.1103/PhysRev.90.153

[4] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[5] PFANN WG, 1952, T AM I MIN MET ENG, V194, P747

[6] TEAL GK, 1950, PHYS REV, V78, P647

[7] *UBER NEUE HALBLEITENDE VERBINDUNGEN-II [J]. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1953, 8 (04): : 248 - 251

[8] WELKER H, 1952, Z NATURFORSCH A, V7, P744

[1] BRECKENRIDGE, 1953, B AM PHYS SOC, V28, P45

[2] BRIGGS HB, UNPUB

[3] PEARSON GL, 1953, PHYS REV, V90, P153, DOI 10.1103/PhysRev.90.153

[4] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[5] PFANN WG, 1952, T AM I MIN MET ENG, V194, P747

[6] TEAL GK, 1950, PHYS REV, V78, P647

[7] *UBER NEUE HALBLEITENDE VERBINDUNGEN-II [J]. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1953, 8 (04): : 248 - 251

[8] WELKER H, 1952, Z NATURFORSCH A, V7, P744