VIBRONIC SPECTRUM OF THE U2 ISOELECTRONIC CENTER IN SI-IN

被引:8
作者
STAHLBUSH, RE
FORMAN, RA
机构
关键词
D O I
10.1016/0022-2313(82)90050-3
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:227 / 232
页数:6
相关论文
共 17 条
[1]   ELECTRON-PHONON INTERACTION IN N-SI [J].
ASCHE, M ;
SARBEI, OG .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 103 (01) :11-50
[2]   EVIDENCE FOR THE EXISTENCE OF A COMPLEX ISOELECTRONIC CENTER IN SI-IN [J].
BROWN, DH ;
SMITH, SR .
JOURNAL OF LUMINESCENCE, 1980, 21 (04) :329-336
[3]   THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J].
DAWBER, PG ;
ELLIOTT, RJ .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521) :453-&
[4]   NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].
DEAN, PJ ;
HAYNES, JR ;
FLOOD, WF .
PHYSICAL REVIEW, 1967, 161 (03) :711-&
[5]   BOUND-EXCITON ABSORPTION IN SI=AL, SI=GA, AND SI=IN [J].
ELLIOTT, KR ;
OSBOURN, GC ;
SMITH, DL ;
MCGILL, TC .
PHYSICAL REVIEW B, 1978, 17 (04) :1808-1815
[6]  
FORMAN RA, UNPUB RAMAN SPECTRUM
[7]  
GRAFF K, 1977, SEMICONDUCTOR SILICO, V77, P575
[8]  
JOUANNE M, 1979, PHYS STAT SOL B, V92, P225
[9]   EDGE LUMINESCENCE SPECTRA OF ACCEPTORS IN SI - IMPLICATIONS FOR MULTIEXCITON COMPLEXES [J].
LYON, SA ;
SMITH, DL ;
MCGILL, TC .
PHYSICAL REVIEW B, 1978, 17 (06) :2620-2624
[10]   OBSERVATION OF LONG LIFETIME LINES IN PHOTO-LUMINESCENCE FROM SI-IN [J].
MITCHARD, GS ;
LYON, SA ;
ELLIOTT, KR ;
MCGILL, TC .
SOLID STATE COMMUNICATIONS, 1979, 29 (05) :425-429