RESONANT RAMAN-SCATTERING IN PARA-TYPE GAAS-ALXGA1-XAS-ALAS QUANTUM-WELLS

被引：12

作者：

SUEMOTO, T ^{[1
]}

FASOL, G ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.6034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6034 / 6037

页数：4

共 11 条

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[3]

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[6] INTERFERENCE EFFECTS - A KEY TO UNDERSTANDING FORBIDDEN RAMAN-SCATTERING BY LO PHONONS IN GAAS [J].

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[7] OBSERVATION OF THE EXCITED-LEVEL OF EXCITONS IN GAAS QUANTUM WELLS [J].

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[8] OBSERVATION OF INTERSUBBAND EXCITATIONS IN A MULTILAYER 2 DIMENSIONAL ELECTRON-GAS [J].

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[9]

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[10]

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