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DIFFUSION LENGTH MEASUREMENTS IN SCHOTTKY-BARRIER GAAS SOLAR-CELLS
被引:22
作者
:
LENDER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
LENDER, RJ
TIWARI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
TIWARI, S
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
BORREGO, JM
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
GHANDHI, SK
机构
:
[1]
Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
来源
:
SOLID-STATE ELECTRONICS
|
1979年
/ 22卷
/ 02期
关键词
:
D O I
:
10.1016/0038-1101(79)90115-1
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:213 / 214
页数:2
相关论文
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[1]
PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN
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RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
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GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
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: 941
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[2]
EFFECT OF CHLORIDE ETCHING ON GAAS EPITAXY USING TMG AND ASH3
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GHANDHI, SK
[J].
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[3]
VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
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BELL LABS,MURRAY HILL,NJ 07974
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BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
PINKAS, E
[J].
JOURNAL OF APPLIED PHYSICS,
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: 1281
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[4]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
HWANG, CJ
论文数:
0
引用数:
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HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3731
-
&
[5]
MCQUAT RF, 1975, 11TH P IEEE PHOT SPE, P371
[6]
SEKELA AM, 1975, 5TH INT S GAAS REL C, P245
[7]
SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P519
←
1
→
共 7 条
[1]
PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(06)
: 941
-
944
[2]
EFFECT OF CHLORIDE ETCHING ON GAAS EPITAXY USING TMG AND ASH3
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BHAT, R
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(05)
: 771
-
776
[3]
VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
CASEY, HC
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
MILLER, BI
PINKAS, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
PINKAS, E
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(03)
: 1281
-
1287
[4]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3731
-
&
[5]
MCQUAT RF, 1975, 11TH P IEEE PHOT SPE, P371
[6]
SEKELA AM, 1975, 5TH INT S GAAS REL C, P245
[7]
SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P519
←
1
→