ELECTROMAGNETIC THEORY OF HETEROSTRUCTURE INJECTION LASERS

[1] WAVE-GUIDING PROPERTIES OF GAAS-A1XGAJ-X AS HETEROSTRUCTURE LASERS [J]. PHYSICS LETTERS A, 1970, A 32 (03) : 207 - +

[2] ADAMS MJ, 1969, BRIT J APPL PHYS, V2, P1549

[3] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS

[4] ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1103

[5] ALLAKHVERDYAN RG, 1970, SOV PHYS SEMICOND+, V4, P277

[6] MODE CONFINEMENT AND GAIN IN JUNCTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1965, QE 1 (06) : 228 - +

[7] ANGULAR DISTRIBUTION OF RADIATION FROM GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3623 - &

[8] BIARD JR, 1964, T METALL SOC AIME, V230, P286

[9] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P360

[10] EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (02) : 31 - 33

[1] WAVE-GUIDING PROPERTIES OF GAAS-A1XGAJ-X AS HETEROSTRUCTURE LASERS [J]. PHYSICS LETTERS A, 1970, A 32 (03) : 207 - +

[2] ADAMS MJ, 1969, BRIT J APPL PHYS, V2, P1549

[3] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS

[4] ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1103

[5] ALLAKHVERDYAN RG, 1970, SOV PHYS SEMICOND+, V4, P277

[6] MODE CONFINEMENT AND GAIN IN JUNCTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1965, QE 1 (06) : 228 - +

[7] ANGULAR DISTRIBUTION OF RADIATION FROM GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3623 - &

[8] BIARD JR, 1964, T METALL SOC AIME, V230, P286

[9] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P360

[10] EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (02) : 31 - 33