LOCAL-FIELD EFFECTS IN THE SCREENING OF IMPURITIES IN SILICON

被引：26

作者：

CAR, R ^{[1
]}

SELLONI, A ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,PHYS THEOR LAB,CH-1007 LAUSANNE,SWITZERLAND

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.42.1365

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A model inverse dielectric matrix is used to calculate the electronic response to impurity potentials in silicon. We show that local-field effects are strong on the scale of interatomic distances and that they give rise to relevant quantitative effects on the binding energies and wave functions of both deep and shallow impurities. © 1979 The American Physical Society.

引用

页码：1365 / 1368

页数：4

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