PROPERTIES OF CRYSTALLINE AND AMORPHOUS SILICON TELLURIDE

被引:48
作者
PETERSEN, KE
BIRKHOLZ, U
ADLER, D
机构
[1] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139
[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源
PHYSICAL REVIEW B | 1973年 / 8卷 / 04期
关键词
D O I
10.1103/PhysRevB.8.1453
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1453 / 1461
页数:9
相关论文
共 24 条
[1]  
Adler D., 1971, Critical Reviews in Solid State Sciences, V2, DOI 10.1080/10408437108243545
[2]  
Altunyan S. A., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2214
[3]  
ALTUNYAN SA, 1971, SOV PHYS SEMICOND+, V4, P1906
[4]   PREPARATION AND PROPERTIES OF SILICON TELLURIDE [J].
BAILEY, LG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1593-&
[5]  
BARTSCH G, 1972, Z METALLKD, V63, P360
[6]  
Betts F., 1970, Journal of Non-Crystalline Solids, V4, P554, DOI 10.1016/0022-3093(70)90093-1
[8]   SHORT-RANGE ORDER IN AMORPHOUS GETE FILMS [J].
DOVE, DB ;
HERITAGE, MB ;
CHOPRA, KL ;
BAHL, SK .
APPLIED PHYSICS LETTERS, 1970, 16 (03) :138-&
[9]   THERMODYNAMIC STUDY OF SILICON SESQUITELLURIDE USING A MASS SPECTROMETER [J].
EXSTEEN, G ;
DROWART, J ;
VANDERAU.A ;
CALLAERTS, R .
JOURNAL OF PHYSICAL CHEMISTRY, 1967, 71 (12) :4130-+
[10]  
Fagen E. A., 1970, Journal of Non-Crystalline Solids, V2, P180, DOI 10.1016/0022-3093(70)90134-1