CRYSTALLOGRAPHIC PROPERTIES OF AS GROWN CDXHG1-XTE EPITAXIAL LAYERS DEPOSITED BY CATHODIC SPUTTERING

被引：14

作者：

ROUSSILLE, R

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(82)90017-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：101 / 107

页数：7

共 7 条

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[2] RF TRIODE-SPUTTERED MERCURY CADMIUM TELLURIDE THIN-FILMS
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SUCHOW, L
GABARA, T
DIODATO, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 29 - 32
[3] DUPUY M, COMMUNICATION
[4] CDXHG1-XTE FILMS BY CATHODIC SPUTTERING
KRAUS, H
PARKER, SG
SMITH, JP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) : 616 - &
[5] SELLA C, 1979, 3EME C INT PULV NIC, P211
[6] GROWTH OF THIN-FILMS OF CDXHG1-XTE SOLID-SOLUTIONS BY CATHODIC SPUTTERING IN A MERCURY-VAPOR PLASMA
ZOZIME, A
COHENSOLAL, G
BAILLY, F
[J]. THIN SOLID FILMS, 1980, 70 (01) : 139 - 152
[7] ZOZIME A, 1977, THESIS PARIS