EMISSIONS RELATED TO DONOR-BOUND EXCITONS IN HIGHLY PURIFIED ZINC SELENIDE SINGLE-CRYSTALS

被引：56

作者：

ISSHIKI, M ^{[1
]}

KYOTANI, T ^{[1
]}

MASUMOTO, K ^{[1
]}

UCHIDA, W ^{[1
]}

SUTO, S ^{[1
]}

机构：

[1] TOHOKU UNIV,COLL GEN EDUC,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.36.2568

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2568 / 2577

页数：10

共 20 条

[1] Dean P. J., 1980, Journal of the Physical Society of Japan, V49, P185
[2] DONOR BOUND-EXCITON EXCITED-STATES IN ZINC SELENIDE
DEAN, PJ
HERBERT, DC
WERKHOVEN, CJ
FITZPATRICK, BJ
BHARGAVA, RN
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 4888 - 4901
[3] BOUND-EXCITON LUMINESCENCE OF CU-DOPED ZNSE
HUANG, SM
NOZUE, Y
IGAKI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L420 - L422
[4] GROWTH AND EXCITON LUMINESCENCE OF ZNSE AND ZNSXSE1-X SINGLE-CRYSTALS
HUANG, XM
IGAKI, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (01) : 24 - 30
[5] ELECTRICAL-PROPERTIES OF ZINC SELENIDE HEAT-TREATED IN CONTROLLED PARTIAL PRESSURES OF CONSTITUENT ELEMENTS
IGAKI, K
SATOH, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) : 1965 - 1971
[6] PHOTOLUMINESCENCE SPECTRA OF HIGH-PURITY ZINC SELENIDE SINGLE-CRYSTALS
ISSHIKI, M
YOSHIDA, T
IGAKI, K
UCHIDA, W
SUTO, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 162 - 166
[7] PREPARATION OF HIGH-PURITY ZINC SELENIDE SINGLE-CRYSTALS AND EVALUATION THROUGH PHOTOLUMINESCENCE SPECTRA
ISSHIKI, M
YOSHIDA, T
TOMIZONO, T
SATOH, S
IGAKI, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (02) : 221 - 225
[8] PREPARATION OF HIGH-PURITY ZINC BY VACUUM DISTILLATION AND ZONE-REFINING
ISSHIKI, M
TOMIZONO, T
YOSHIDA, T
OHKAWA, T
IGAKI, K
[J]. JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1984, 48 (12) : 1176 - 1179
[9] KASUYA A, 1982, J PHYS SOC JPN, V51, P922, DOI 10.1143/JPSJ.51.922
[10] OPTICAL PROPERTIES OF SUBSTITUTIONAL DONORS IN ZNSE
MERZ, JL
SHIEVER, JW
NASSAU, K
KUKIMOTO, H
[J]. PHYSICAL REVIEW B, 1972, 6 (02): : 545 - &

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