INTERFACIAL OXIDATION OF SILICON SUBSTRATES THROUGH TA2O5 FILMS

被引：20

作者：

KATO, T

ITO, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 10期

关键词：

D O I：

10.1149/1.2095386

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2586 / 2590

页数：5

共 21 条

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[2]

HASHIMOTO C, 1986, 18TH C SOL STAT DEV, P253

[3]

KATO T, 1983, S VLSI

[4] LEAKAGE-CURRENT INCREASE IN AMORPHOUS TA2O5 FILMS DUE TO PINHOLE GROWTH DURING ANNEALING BELOW 600-DEGREES-C [J].

KIMURA, S ;

NISHIOKA, Y ;

SHINTANI, A ;

MUKAI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2414-2418

[5] STUDIES OF CHEMISTRY AT THE TA/SI INTERFACE AS A FUNCTION OF THERMAL-PROCESSING [J].

LEW, PW ;

HELMS, CR ;

REITH, TM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) :1730-1735

[6] INFLUENCE OF SIO2 AT THE TA2O5/SI INTERFACE ON DIELECTRIC CHARACTERISTICS OF TA2O5 CAPACITORS [J].

NISHIOKA, Y ;

SHINRIKI, H ;

MUKAI, K .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2335-2338

[7] DIELECTRIC CHARACTERISTICS OF DOUBLE-LAYER STRUCTURE OF EXTREMELY THIN TA2O5/SIO2 ON SI [J].

NISHIOKA, Y ;

KIMURA, S ;

SHINRIKI, H ;

MUKAI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :410-415

[8] ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J].

OEHRLEIN, GS ;

REISMAN, A .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6502-6508

[9] SOME PROPERTIES OF CRYSTALLIZED TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J].

OEHRLEIN, GS ;

DHEURLE, FM ;

REISMAN, A .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3715-3725

[10] OXIDATION OF HYDROGEN DOPED TANTALUM FILMS ON SILICON [J].

OHFUJI, S ;

HASHIMOTO, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03) :714-719

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