WETTING PHENOMENA ON ROUGH SUBSTRATES

被引:31
作者
LI, H
KARDAR, M
机构
[1] Department of Physics, Massachusetts Institute of Technology, Cambridge
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 10期
关键词
D O I
10.1103/PhysRevB.42.6546
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider wetting phenomena in the vicinity of rough substrates. The quenched random geometry of the substrate is assumed to be a self-affine fractal with a roughness exponent of S. Asymptotic critical properties on approaching complete and critical wetting transitions are studied by combining the replica method with scaling and renormalization-group arguments. We find new critical behavior, controlled by a zero-temperature fixed point, when S exceeds the thermal roughness exponent of the emerging wetting layer. The possibility of an effective dimensional reduction due to randomness is considered. In two dimensions a number of exact results are obtained by using a many-body transfer-matrix technique. © 1990 The American Physical Society.
引用
收藏
页码:6546 / 6554
页数:9
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