RETURN FLOWS IN HORIZONTAL MOCVD REACTORS STUDIED WITH THE USE OF TIO2 PARTICLE INJECTION AND NUMERICAL-CALCULATIONS

被引:80
作者
VISSER, EP [1 ]
KLEIJN, CR [1 ]
GOVERS, CAM [1 ]
HOOGENDOORN, CJ [1 ]
GILING, LJ [1 ]
机构
[1] DELFT UNIV TECHNOL,FAC APPL PHYS,HEAT TRANSFER SECT,2600 GA DELFT,NETHERLANDS
关键词
D O I
10.1016/0022-0248(89)90127-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:929 / 946
页数:18
相关论文
共 32 条
[1]   DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].
BASS, SJ .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178
[2]   CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE [J].
CHANG, CY ;
SU, YK ;
LEE, MK ;
CHEN, LG ;
HOUNG, MP .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :24-29
[3]  
CHIU KC, 1987, INT J HEAT MASS TRAN, V30, P1645
[4]   VORTICITY-VELOCITY METHOD FOR THE GRAETZ PROBLEM AND THE EFFECT OF NATURAL-CONVECTION IN A HORIZONTAL RECTANGULAR CHANNEL WITH UNIFORM WALL HEAT-FLUX [J].
CHOU, FC ;
HWANG, GJ .
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1987, 109 (03) :704-710
[5]   A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J].
COLTRIN, ME ;
KEE, RJ ;
MILLER, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :425-434
[6]   HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].
DAPKUS, PD ;
MANASEVIT, HM ;
HESS, KL ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23
[7]   NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].
DUCHEMIN, JP ;
BONNET, M ;
KOELSCH, F ;
HUYGHE, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149
[9]  
GILING LJ, 1985, CRYSTAL GROWTH ELECT, pCH6
[10]   CONVECTIVE INSTABILITY IN THERMAL ENTRANCE REGION OF A HORIZONTAL PARALLEL-PLATE CHANNEL HEATED FROM BELOW [J].
HWANG, GJ ;
CHENG, KC .
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1973, 95 (01) :72-77