INTERBAND OPTICAL-TRANSITIONS IN SEMICONDUCTOR QUANTUM WIRES - SELECTION-RULES AND ABSORPTION-SPECTRA

被引:81
作者
BOCKELMANN, U [1 ]
BASTARD, G [1 ]
机构
[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY
来源
EUROPHYSICS LETTERS | 1991年 / 15卷 / 02期
关键词
ELECTRON STATES IN LOW-DIMENSIONAL STRUCTURES (INC QUANTUM; WELLS; SUPERLATTICES; LAYER STRUCTURES AND INTERCALATION; COMPOUNDS); OPTICAL PROPERTIES OF THIN FILMS (INC SUPERLATTICES; HETEROSTRUCTURES; AND INTERCALATION COMPOUNDS); PHOTOLUMINESCENCE;
D O I
10.1209/0295-5075/15/2/018
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The nonparabolic valence subband dispersions of GaAs quantum wires are calculated starting from the Luttinger-Kohn Hamiltonian. The electron hole matrix elements are derived for the different photon polarizations with respect to the wire orientation and are studies as a function of the lateral confinement. It is shown that the confinement-induced mixing between heavy-hole (hh) and light-hole (lh) states is crucial for the anisotropy of interband transitions. We demonstrate how a polarization-dependent optical experiment can be used to measure the hh-lh mixing in the valence subband states and to identify the subbands that contribute to an observed transition.
引用
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页码:215 / 220
页数:6
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