X-RAY PHOTOEMISSION-STUDY OF Y-PROMOTED OXIDATION OF THE SI(100) SURFACE

被引：33

作者：

MESARWI, A ^{[1
]}

IGNATIEV, A ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

来源：

SURFACE SCIENCE | 1991年 / 244卷 / 1-2期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0039-6028(91)90165-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interaction of yttrium overlayers with an atomically clean Si(100) surface has been studied by X-ray photoemission. Also studied, were the effects of Y overlayers on the oxidation of silicon. It is found that the growth of yttrium on silicon can be explained by a three-step mechanism. At low coverage (theta less-than-or-equal-to 2 ML) yttrium deposits on top of silicon associated with charge transfer from the Y overlayer to the silicon. Between 2 and 5 ML coverage silicon diffuses through the Y overlayer, and above 5 ML a metallic Y is deposited on top of the silicon. In addition, yttrium overlayers were found to significantly enhance the oxidation of the Si(100) surface. At 5 ML Y coverage the obtained SiO2 oxides were up to a factor of 15 thicker than those obtained for the clean unpromoted Si(100) surface.

引用

页码：15 / 21

页数：7

共 29 条

[1] ON THE ORIGIN OF ADDITIONAL PEAKS IN THE PHOTOELECTRON-SPECTRA OF YTTRIUM [J].

BAPTIST, R ;

PELLISSIER, A ;

CHAUVET, G .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1988, 73 (01) :107-114

[2] INTERACTION OF ALKALI-METALS WITH SEMICONDUCTORS [J].

BATRA, IP .

PROGRESS IN SURFACE SCIENCE, 1987, 25 (1-4) :175-189

[3] SYNCHROTRON RADIATION STUDIES OF THE EFFECT OF THERMAL-TREATMENT ON THE SI(111)-YB INTERFACES [J].

BRAICOVICH, L ;

ABBATI, I ;

CARBONE, C ;

NOGAMI, J ;

LINDAU, I .

SURFACE SCIENCE, 1986, 168 (1-3) :193-203

[4] EFFECT OF NOBLE-METAL BUFFER LAYERS ON SUPERCONDUCTING YBA2CU3O7 THIN-FILMS [J].

CHIEN, CL ;

XIAO, G ;

STREITZ, FH ;

GAVRIN, A ;

CIEPLAK, MZ .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2155-2157

[5] SURFACE METALLIZATION OF SILICON BY POTASSIUM ADSORPTION ON SI(001)-(2X1) [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW B, 1988, 37 (06) :2955-2967

[6] FEASIBILITY OF HYBRID JOSEPHSON FIELD-EFFECT TRANSISTORS [J].

CLARK, TD ;

PRANCE, RJ ;

GRASSIE, ADC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2736-2743

[7] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

FLITSCH, R ;

RAIDER, SI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308

[8] SAMARIUM VALENCE CHANGES AND REACTIVE INTERDIFFUSION AT THE SI(LLL)-SM INTERFACE [J].

FRANCIOSI, A ;

WEAVER, JH ;

PERFETTI, P ;

KATNANI, AD ;

MARGARITONDO, G .

SOLID STATE COMMUNICATIONS, 1983, 47 (06) :427-430

[9] PREPARATION AND SUBSTRATE REACTIONS OF SUPERCONDUCTING Y-BA-CU-O FILMS [J].

GURVITCH, M ;

FIORY, AT .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1027-1029

[10] STUDY OF OXIDIZED SILICON BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

HILL, JM ;

ROYCE, DG ;

MEHTA, M ;

FADLEY, CS ;

WAGNER, LF ;

GRUNTHER, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :376-377

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