8X18 TOP EMITTING INDEPENDENTLY ADDRESSABLE SURFACE EMITTING LASER ARRAYS WITH UNIFORM THRESHOLD CURRENT AND LOW THRESHOLD VOLTAGE

被引：26

作者：

VAKHSHOORI, D ^{[1
]}

WYNN, JD ^{[1
]}

ZYDZIK, GJ ^{[1
]}

LEIBENGUTH, RE ^{[1
]}

机构：

[1] AT&T BELL LABS,SSTC,BREINIGSVILLE,PA 18031

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 15期

关键词：

D O I：

10.1063/1.109584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication of 8 X 18 independently addressable vertical cavity surface emitting laser arrays (VC-SELA) with uniform threshold current, threshold voltage, and high optical output power is reported. The top surface emitting array contains GaAs multiquantum well active regions and exhibits uniform characteristics over a 4 X 9 mm2 area. The cw threshold current is almost-equal-to 4.2 -/+ 0.2 mA, the threshold voltage is 2.65 -/+ 0.1 V, and the output optical power is greater than 2 mW for the individual elements of the array. To realize these large VC-SELAs, a novel ion implantation mask fabrication was developed.

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页码：1718 / 1720

页数：3

相关论文

共 13 条

[1] PHASE-COUPLED 2-DIMENSIONAL ALXGA1-XAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY [J].

DEPPE, DG ;

VANDERZIEL, JP ;

CHAND, N ;

ZYDZIK, GJ ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1990, 56 (21) :2089-2091

[2] LOW THRESHOLD PLANARIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

GEELS, RS ;

CORZINE, SW ;

SCOTT, JW ;

YOUNG, DB ;

COLDREN, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (04) :234-236

[3] COHERENT BEAMS FROM HIGH-EFFICIENCY 2-DIMENSIONAL SURFACE-EMITTING SEMICONDUCTOR-LASER ARRAYS [J].

GOURLEY, PL ;

WARREN, ME ;

HADLEY, GR ;

VAWTER, GA ;

BRENNAN, TM ;

HAMMONS, BE .

APPLIED PHYSICS LETTERS, 1991, 58 (09) :890-892

[4] PERFORMANCE OF GAIN-GUIDED SURFACE EMITTING LASERS WITH SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS [J].

HASNAIN, G ;

TAI, K ;

YANG, L ;

WANG, YH ;

FISCHER, RJ ;

WYNN, JD ;

WEIR, B ;

DUTTA, NK ;

CHO, AY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1377-1385

[5] HIGH-TEMPERATURE AND HIGH-FREQUENCY PERFORMANCE OF GAIN-GUIDED SURFACE EMITTING LASERS [J].

HASNAIN, G ;

TAI, K ;

DUTTA, NK ;

WANG, YH ;

WYNN, JD ;

WEIR, BE ;

CHO, AY .

ELECTRONICS LETTERS, 1991, 27 (11) :915-916

[6]

HASNAIN G, 1992, C LASERS ELECTROOPTI, P170

[7] CHARACTERISTICS OF TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS [J].

LEE, YH ;

TELL, B ;

BROWNGOEBELER, K ;

JEWELL, JL ;

BURRUS, CA ;

HOVE, JMV .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (09) :686-688

[8] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SINGLE-QUANTUM-WELL MICROLASER DIODES [J].

LEE, YH ;

JEWELL, JL ;

SCHERER, A ;

MCCALL, SL ;

HARBISON, JP ;

FLOREZ, LT .

ELECTRONICS LETTERS, 1989, 25 (20) :1377-1378

[9] LARGE 2-DIMENSIONAL ARRAYS OF PHASE-LOCKED VERTICAL CAVITY SURFACE EMITTING LASERS [J].

ORENSTEIN, M ;

KAPON, E ;

HARBISON, JP ;

FLOREZ, LT ;

STOFFEL, NG .

APPLIED PHYSICS LETTERS, 1992, 60 (13) :1535-1537

[10] VERTICAL-CAVITY SURFACE-EMITTING INGAAS GAAS-LASERS WITH PLANAR LATERAL DEFINITION [J].

ORENSTEIN, M ;

VONLEHMEN, AC ;

CHANGHASNAIN, C ;

STOFFEL, NG ;

HARBISON, JP ;

FLOREZ, LT ;

CLAUSEN, E ;

JEWELL, JE .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2384-2386