ELECTRICAL TRANSPORT IN N-TYPE BISMUTH MODIFIED A-GE20SE80 AND A-AS2SE3 THIN-FILMS

被引：6

作者：

KUMAR, S

KASHYAP, SC

CHOPRA, KL

机构：

[1] INDIAN INST TECHNOL,DEPT PHYS,THIN FILM LAB,NEW DELHI 110016,INDIA

[2] INDIAN INST TECHNOL,CTR MAT SCI & TECHNOL,NEW DELHI 110016,INDIA

来源：

THIN SOLID FILMS | 1992年 / 217卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90621-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of amorphous (a-) Ge20Se80-xBix (x = 4, 10) and a-As2Se3-xBix(x = 0.2, 0.5) have been prepared by thermal evaporation and characterized for their electrical and optical properties. The addition of bismuth, in excess of 4 at.%, to p-type a-Ge20Se80 and a-AS2Se3 films results in large (several orders of magnitude) changes in the electrical conductivity and conversion of the conductivity from p to n type. A correlation of the electrical and optical data of the modified films suggests that the addition of bismuth causes a Fermi level shift and the electrical transport is predominantly due to hopping of electrons after being excited into localized states at the conduction band edge.

引用

页码：146 / 151

页数：6

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