TEMPERATURE DISTRIBUTION IN SILICON INGOTS DURING CRYSTAL GROWTH

被引：12

作者：

AKIYAMA, K

YAMAGUCHI, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 05期

关键词：

D O I：

10.1063/1.1728861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1899 / &

相关论文

共 5 条

[1] ABELES B, 1960, P C THERMOELECTRICIT, P289
[2] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES
BILLIG, E
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +
[3] DIE WARMELEITFAHIGKEIT VON GERMANIUM BEI HOHEN TEMPERATUREN
KETTEL, F
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (01) : 52 - 58
[4] PRICE PJ, 1955, PHILOS MAG, V46, P1252
[5] THE THERMAL CONDUCTIVITY OF GERMANIUM, SILICON AND INDIUM ARSENIDE FROM 40-DEGREES-C TO 425-DEGREES-C
STUCKES, AD
[J]. PHILOSOPHICAL MAGAZINE, 1960, 5 (49): : 84 - 99