HIGH-PERFORMANCE LOW-POWER CMOS MEMORIES USING SILICON-ON-SAPPHIRE TECHNOLOGY

Complementary MOS/silicon- on- sapphire (SOS) inverters using sili- con- gate technology and 5- U channel- length devices have achieved nanosecond propagation delays and picojoule dynamic power- x delay products. In addition to high switching speed and low dynamic power, inverters with low leakage currents and threfore low quiescent power have been obtained. Two complex CMOS/SOS memories that realize the performance of the individual inverters have been fabricated. An aluminum- gate 256- bit fully decoded static random- access memory features a typical access time of 50 nsec at 10 v with a power dissipation of 0. 4 Uw/bit (quiescent) and 10 Uw/bit (dynamic). The access time at 5 v is typically 95 nsec.