CARRIER CONCENTRATION-DEPENDENCE AND TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON (100) N-CHANNEL INVERSION-LAYERS AT LOW-TEMPERATURES

被引：27

作者：

KAWAGUCHI, Y ^{[1
]}

SUZUKI, T ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

关键词：

D O I：

10.1016/0038-1098(80)90272-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：257 / 259

页数：3

共 6 条

[1] HIKAMI S, 1980, PROG THEOR PHYS, V63, P707, DOI 10.1143/PTP.63.707
[2] NEGATIVE MAGNETORESISTANCE IN SILICON(100) MOS INVERSION-LAYERS
KAWAGUCHI, Y
KAWAJI, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (02) : 699 - 700
[3] KAWAGUCHI Y, 1979, 2 P YAM C EL PROP 2, V98
[4] NAKAMURA K, COMMUNICATION
[5] CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS
STERN, F
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (22) : 1469 - 1472
[6] STERN F, COMMUNICATION