PHOTOLUMINESCENCE SPECTROSCOPY OF LOCALIZED EXCITONS IN SI1-XGEX

被引：12

作者：

LENCHYSHYN, LC

THEWALT, MLW

STURM, JC

SCHWARTZ, PV

ROWELL, NL

NOEL, JP

HOUGHTON, DC

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

[2] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 02期

关键词：

LOCALIZED EXCITONS; PHOTOLUMINESCENCE SPECTROSCOPY; SI1-XGEX;

D O I：

10.1007/BF02665032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have recently found that high quantum efficiency can be achieved in strained Si1-xGex alloy layers through the elimination of nonradiative channels. We observed a photoluminescence process in SiGe grown on [100] silicon by rapid thermal chemical vapor deposition, which was attributed to free excitons localized by random fluctuations in alloy composition. The external quantum efficiency of this process was measured directly for a single Si0.75Ge0.25 quantum well and found to be extraordinarily high, about 11.5 +/- 2%. In this paper, we present additional data on the localized exciton photoluminescence, including temperature dependence, time decay curves, and effects of sample annealing.

引用

页码：233 / 238

页数：6

共 36 条

[1] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].