APPARATUS FOR THE FLOATING-ZONE REFINING OF GALLIUM ARSENIDE

[1] THE FLOATING-ZONE MELTING OF REFRACTORY METALS BY ELECTRON BOMBARDMENT [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1957, 34 (04): : 142 - 147

[2] TECHNOLOGY OF GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1960, 1 (02) : 97 - &

[3] ZUR STABILITAT SENKRECHTER SCHMELZZONEN [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1956, 11 (03): : 238 - 243

[4] CRYSTALLIZATION OF SILICON FROM A FLOATING LIQUID ZONE [J]. PHYSICAL REVIEW, 1953, 89 (06): : 1297 - 1297

[5] Smith R.L., 1957, J METALS T, V9, P478

[6] VANDENBOOMGAARD J, 1955, J ELECTRONICS, V1, P212

[7] VANDENBOOMGAARD J, 1957, PHILIPS RES REP, V12, P127

[8] THE PREPARATION AND PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 169 - &

[1] THE FLOATING-ZONE MELTING OF REFRACTORY METALS BY ELECTRON BOMBARDMENT [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1957, 34 (04): : 142 - 147

[2] TECHNOLOGY OF GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1960, 1 (02) : 97 - &

[3] ZUR STABILITAT SENKRECHTER SCHMELZZONEN [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1956, 11 (03): : 238 - 243

[4] CRYSTALLIZATION OF SILICON FROM A FLOATING LIQUID ZONE [J]. PHYSICAL REVIEW, 1953, 89 (06): : 1297 - 1297

[5] Smith R.L., 1957, J METALS T, V9, P478

[6] VANDENBOOMGAARD J, 1955, J ELECTRONICS, V1, P212

[7] VANDENBOOMGAARD J, 1957, PHILIPS RES REP, V12, P127

[8] THE PREPARATION AND PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 169 - &