LARGE-SIGNAL NONLINEAR DISTORTION PREDICTION FOR A SINGLE-MODE LASER DIODE UNDER MICROWAVE INTENSITY MODULATION

被引：78

作者：

WAY, WI

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1109/JLT.1987.1075517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：305 / 315

页数：11

共 22 条

[1]

ABUELMAATTI MT, 1985, J LIGHTWAVE TECHNOL, P1343

[2]

ABUELMAATTI MT, 1985, IEEE T COMMUN MAR, P246

[3]

[Anonymous], 1977, SEMICONDUCTOR LASERS

[4]

DARCIE TE, 1986, ELECTRON LETT, V22, P619, DOI 10.1049/el:19860423

[5] INTERMODULATION AND HARMONIC DISTORTION IN INGAASP LASERS [J].

DARCIE, TE ;

TUCKER, RS ;

SULLIVAN, GJ .

ELECTRONICS LETTERS, 1985, 21 (16) :665-666

[6] HIGH-FREQUENCY CHARACTERISTICS OF GAAIAS INJECTION-LASERS [J].

FIGUEROA, L ;

SLAYMAN, CW ;

YEN, HW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1718-1727

[7]

Hirota O., 1982, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE65, P94

[8]

HONG T, 1979, T IECE JAPAN, P142

[9] THE INTRINSIC ELECTRICAL EQUIVALENT-CIRCUIT OF A LASER DIODE [J].

KATZ, J ;

MARGALIT, S ;

HARDER, C ;

WILT, D ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) :4-7

[10]

Kikushima K., 1984, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE67, P19

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