INFLUENCE OF NON-UNIFORMLY DOPED SUBSTRATES ON MOS C-V CURVES

[1] AUBUCHON KG, 1969, INT C PROPERTIES USE

[2] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &

[3] A PROCESS FOR THE STEP-BY-STEP INTEGRATION OF DIFFERENTIAL EQUATIONS IN AN AUTOMATIC DIGITAL COMPUTING MACHINE [J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1951, 47 (01): : 96 - 108

[4] ZAININGER KH, 1965, T IEEE, VED12, P167

[1] AUBUCHON KG, 1969, INT C PROPERTIES USE

[2] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &

[3] A PROCESS FOR THE STEP-BY-STEP INTEGRATION OF DIFFERENTIAL EQUATIONS IN AN AUTOMATIC DIGITAL COMPUTING MACHINE [J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1951, 47 (01): : 96 - 108

[4] ZAININGER KH, 1965, T IEEE, VED12, P167