The Influence of Interstitial Impurity Atoms on the Recovery Behaviour of Cold-Worked Vanadium

Vanadium containing oxygen and nitrogen shows, after deformation at room temperature by rolling, two distinct recovery stages at annealing temperatures of about 450 and 550 degrees K. Measurements of electrical resistivity and of low frequency damping were made. By variation of the gas content of the samples, it was established that the stage situated at 450 degrees K is caused by the migration of oxygen atoms to dislocations, whereas at 550 degrees K nitrogen atoms migrate to dislocations. Two small steps occurring at 340 and 400 degrees K can be attributed to ordering of oxygen and nitrogen atoms in the dislocation stress fields.