NOISE GAIN AND OPERATING TEMPERATURE OF QUANTUM-WELL INFRARED PHOTODETECTORS

被引：98

作者：

LIU, HC

机构：

[1] Institute for Microstructural Sciences, National Research Council, Ottawa

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 22期

关键词：

D O I：

10.1063/1.108115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The difference between the noise gain associated with dark current and the photoconductive gain in quantum well infrared photodetectors is discussed in light of recent experiments. The theoretical model is based on a single key parameter: the electron trapping probability. An empirical expression for the trapping probability or, alternatively, the electron escape probability is proposed. Using the dark current, the gain, the trapping probability expressions, and the device operating temperature for achieving background limited infrared performance is discussed.

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页码：2703 / 2705

页数：3

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