TRANSPORT EQUATIONS IN HEAVILY DOPED SILICON, AND CURRENT GAIN OF A BIPOLAR TRANSISTOR

被引：69

作者：

MOCK, MS

机构：

[1] NYU,COURANT INST MATH SCI,NEW YORK,NY 10016

[2] IBM CORP,SYST PROD DIV,E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533

来源：

关键词：

D O I：

10.1016/0038-1101(73)90080-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1251 / 1259

页数：9

共 24 条

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