HETERO-EPITAXIAL GROWTH OF GAP ON A SI (100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：18

作者：

KAWANAMI, H

SAKAMOTO, T

TAKAHASHI, T

SUZUKI, E

NAGAI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1143/JJAP.21.L68

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L68 / L70

页数：3

共 15 条

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[8] HETEROEPITAXIAL GROWTH OF GAP ON SI SUBSTRATES BY EVAPORATION METHOD [J].

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[9] HETERO-EPITAXIAL GROWTH OF GALLIUM-PHOSPHIDE ON SILICON [J].

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