CARRIER DISTRIBUTION IN GRADED-BAND-GAP SEMICONDUCTORS UNDER ASYMMETRIC BAND-EDGE GRADIENTS

被引：15

作者：

CHATTOPADHYAYA, SK ^{[1
]}

MATHUR, VK ^{[1
]}

机构：

[1] KURUKSHETRA UNIV, DEPT PHYS, KURUKSHETRA, INDIA

来源：

关键词：

D O I：

10.1103/PhysRevB.9.3517

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3517 / 3523

页数：7

共 15 条

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MATHUR, VK
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MARFAING, Y
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1131 - +
[4] SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY
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[6] THEORY OF ELECTRONIC STATES AND TRANSPORT IN GRADED MIXED SEMICONDUCTORS
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[J]. PHYSICAL REVIEW, 1969, 177 (03): : 1179 - &
[7] HILDEBRAND FB, 1962, ADV CALCULUS APPLICA, pCH1
[8] HILDEBRAND FB, 1962, ADV CALCULUS APPLICA, pCH4
[9] GROWTH AND ELECTRICAL PROPERTIES OF ZINC-CADMIUM SULFIDE GRADED-BAND-GAP CRYSTALS
INDRADEV
VANRUYVE.LJ
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[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3344 - &
[10] Kroemer H., 1957, RCA REV, V18, P332