IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS

被引:29
作者
GERLACH, E
RAUTENBERG, M
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 86卷 / 02期
关键词
D O I
10.1002/pssb.2220860205
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:479 / 482
页数:4
相关论文
共 4 条
[1]   THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].
CONWELL, E ;
WEISSKOPF, VF .
PHYSICAL REVIEW, 1950, 77 (03) :388-390
[2]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[3]   NEW METHOD FOR CALCULATING IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J].
GERLACH, E .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 61 (02) :K97-K100
[4]  
GERLACH E, 1977, BK# 01260, V17, P157